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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 * High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25C Derate above 25C 200 1.14 mWatts mW/ C MSC1324.PDF 10-25-99 MRF904 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= .1 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 25 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 5 Vdc) 30 200 - DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) Noise Figure (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) Value Typ. 4.0 1.0 1.5 Max. 1.5 Unit GHz pF dB CCB NF MSC1324.PDF 10-25-99 MRF904 Functional Symbol Test Conditions Min. GU max Maximum Unilateral Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) Maximum Available Gain (1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 500 MHz) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 1 GHz) 9.5 Value Typ. 11 7 10.5 6.5 11 7 Max. Unit dB S |21| 2 dB MAG dB (1) Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 5 V, IC = 6 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .66 .41 .31 .26 .20 .18 .16 .16 .15 .15 -37 -52 -54 -59 -61 -59 -60 -66 -74 -76 |S21| 10.5 7.03 5.33 4.00 3.38 3.00 2.69 2.30 2.16 2.16 131 111 98 90 87 81 75 70 71 63 |S12| .040 .065 .093 .111 .136 .162 .186 .200 .215 .243 71 71 70 69 71 68 66 63 65 62 |S22| .781 .597 .551 .517 .467 .455 .438 .437 .409 .413 -23 -27 -26 -30 -30 -32 -36 -42 -47 -48 MSC1324.PDF 10-25-99 MRF904 MSC1324.PDF 10-25-99 |
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